bipolar devices
英 [ˌbaɪˈpəʊlə(r) dɪˈvaɪsɪz]
美 [ˌbaɪˈpoʊlər dɪˈvaɪsəz]
网络 双极性器件; 备分装置
双语例句
- In this paper, the current state and technology of diamond devices are discussed. The diamond bipolar devices and the diamond FET are described. Study on Secondary Electron Emission Performance of B-doped Diamond Films
介绍了金刚石器件的发展现状与技术，对金刚石双极器件和金刚石场效应管进行了分析。掺硼金刚石薄膜二次电子发射特性的研究 - Furthermore, the oscillator should use discrete bipolar and FET devices in the circuits recommended by the crystal manufacturers.
此外，振荡器应该使用被晶体生产厂商建议的分立的双极型场效应晶体管输出。 - Process Synthesis and Its Application to MOSFET's and Bipolar Devices
工艺综合及其在MOSFET和双极器件中的应用 - Advances on High Performance Si Bipolar Devices
高性能硅双极器件的发展 - A model for device degradation was established, with which the reliability of bipolar devices under operation condition is analyzed.
建立了器件的退化模型，对双极器件在使用条件下的可靠性进行了分析。 - Effects of Si Material on Very High-Speed Bipolar Devices
硅材料对双极超高速器件的影响 - Determination of Energy Distribution of Slow Interface Traps in Bipolar Devices by 1/ f Noise Measurements
双极型器件慢界面陷阱能量分布的1／f噪声分析方法 - Ion Implantation for High Speed Bipolar Devices
高速双极器件制造中的离子注入技术 - A simple description is given to ECL circuit configurations and their performances in VLSI ICs, followed by a detailed discussion on device scaling, structure modifications and developments of related process technologies. Finally, low temperature operation performances of bipolar devices are analyzed.
简述了VLSI中ECL电路结构和性能之后，着重讨论双极器件的按比例缩小、结构的改进以及相关的工艺技术的发展，最后分析了双极器件的低温工作性能。 - On the base of analysis design principle, we proposed a low dropout regulator using BiCMOS technology which benefits from the speed of bipolar devices and the low power consumption of MOS devices.
本文在分析LDO设计原理的基础知识上，提出了一种采用BiCMOS结构的低压差线性稳压器，它充分利用了双极型器件速度快和MOS器件功耗低的特性。 - The enhanced damage was summarized for bipolar devices and bipolar linear circuits in the radiation environment of low dose rate. It could cause the early failure of systems.
综述双极器件和双极线性电路在低剂量率辐射环境下的增强损伤，它可引起系统的早期失效。 - The electrical property of the base surface potential has a significant effect on bipolar devices. A two-dimensional model for the base surface potential has been set up for integrated bipolar n-p-n transistors.
基区表面电特性对双极器件影响很大，本文建立了集成双极npn晶体管基区表面电势的二维模型。 - A microelectronic test pattern for evaluating bipolar devices ( npn or pnp transistors) is presented.
本文提出一种用于科学地评价双极型半导体器件（npn或pnp晶体管）工艺水平的微电子测试图形。 - Author introduces a process technology that the Polyimide ( PI) is used as the surface passivating of the Si bipolar high-power devices about chip madding phase. The process has the advantages of simple process, costing cheaply and being compatible with the common flat madding process.
介绍了聚酰亚胺（PI）作为硅双极型大功率开关器件芯片制造阶段表面钝化膜的工艺技术，该钝化工艺的工艺简单、成本低且能与普通的硅平面制造工艺兼容。 - The combination of FETs with bipolar devices has become one of the tendencies of development for novel, specifically integrated op amps.
场效应管与双极型器件相结合，已成为新型专用型集成运算放大器的主要发展方向之一。 - The research advances in novel SiGe strained layer heterojunction bipolar devices
新型锗硅应变层异质结构双极器件研究进展 - Degradation mechanism of silicon direct bonding/ silicon-on-insulator ( SDB/ SOI) bipolar devices is discussed.
对硅片直接键合/绝缘体上硅（SDB/SOI）双极电路的退化机理进行了描述。 - High-frequency and microwave bipolar power devices have been largely applied in military and civil electronic equipment, mainly in communication, radar ( including navigation) and electron-confrontation field.
双极高频、微波功率器件已大量应用于军用、民用电子设备中，其典型应用主要在通信、雷达（含导航）和电子对抗等领域。 - Research of High Frequency and Microwave Bipolar Power Devices
双极高频、微波功率器件的研究 - Recent Progress in SiGe Materials and Relevant Bipolar Devices
SiGe材料及其在双极型器件中的应用 - By combining JFETs with bipolar devices, op-amps with high speed, wide-band and high input impedance can be obtained.
JFET与双极器件相结合，可以获得高速/宽带/高输入阻抗的运算放大器。 - Research of Deep-Trench Isolation Technology Applied to Bipolar Power Devices
双极功率器件中的深槽隔离 - On the Application of SDB Technique to Bipolar Power Devices
硅片直接键合技术在双极功率器件中的应用 - Research on Failure Mechanism and Reliability Evaluation of SDB/ SOI Bipolar Devices
SDB/SOI双极器件失效机理与可靠性评价技术研究 - IGBT combines the features of voltage-control in MOS devices and conductivity modulation in bipolar devices.
IGBT是一种具有MOS电压控制和双极导通调制相结合的器件。 - The early work took aim to design and manufacture high-temperature bipolar devices and thick film ICs.
但早期的工作的主要目标是设计与制作双极型高温器件和厚膜集成电路。 - The influence of the thickness of the first thin film layer and the substrate temperature on the performance of bipolar devices, by optimizing the experimental conditions to obtain the carrier balance bipolar devices.
分析了第一层薄膜层厚度和基底温度对双极型器件性能的影响，通过优化实验条件获得了载流子平衡的双极型器件。 - The bigger the ratio of Dd/ ( Dd+ Di), in the sensitive region caused by incident particles, the severer the displacement damage, and thus showing an obvious feature of displacement damage for bipolar devices.
入射粒子在器件敏感区内产生的Dd/（Dd+Di）越大，造成的位移损伤越严重，器件的电性能退化越易呈现位移损伤的特征。 - Therefore, in-depth research on the radiation effects of pn junction and to find a characterization technique which can be used to evaluate the radiation tolerance of bipolar devices are needed urgently.
因此迫切需要对pn结材料辐射损伤效应进行深入研究，并提出一种表征技术用以评价双极型器件的抗辐射能力。 - Pn junction is the basic structure in bipolar devices, and the radiation tolerance of this structure have direct impacts on the reliability of bipolar devices operated in radiation environment.
pn结是双极型器件的基本结构，这种结构的抗辐射能力将直接影响双极型器件在辐射环境中的可靠性。